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Electronic workbench circuit simulator2/13/2023 ![]() However, this is true only for the investigated IRF1010N transistor. ![]() When a gate current (driver) is more than 0.6 A, the reduction of loss is insignificant, and it is best to choose a driver with output currents of more than 0.6 A. While the power of dynamic losses at the time of switching the transistor on depends on the gate current, it decreases with the increasing current. It is shown that the power of static losses depends on the resistance of the open transistor channel, the current flowing through the transistor, duty cycle, and it does not depend on the gate current. A number of important facts have been obtained by using the EWB program of circuit simulation, which should be taken into account when designing power electronics devices and secondary power sources for radioelectronic facilities, in particular. Issues of modeling of losses in MOSFET keys from the Electronics Workbench (EWB) program library as well as optimization of the power key operation mode are considered.
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